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regarding the change of names mentioned in the document, such as hitachi electric and hitachi xx, to renesas technology corp. the semiconductor operations of mitsubishi electric and hitachi were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although hitachi, hitachi, ltd., hitachi semiconductors, and other hitachi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. renesas technology home page: http://www.renesas.com renesas technology corp. customer support dept. april 1, 2003 to all our customers
cautions keep safety first in your circuit designs! 1. renesas technology corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas technology corporation or a third party. 2. renesas technology corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by renesas technology corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact renesas technology corporation or an authorized renesas technology corporation product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by renesas technology corporation by various means, including the renesas technology corporation semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact renesas technology corporation or an authorized renesas technology corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corporation is necessary to reprint or reproduce in whole or in part these materials. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. 8. please contact renesas technology corporation for further details on these materials or the products contained therein.
2SC5820 silicon npn epitaxial high frequency low noise amplifier / oscillator ade-208-1604a (z) rev.1 nov. 2002 features ? high gain bandwidth product f t = 20 ghz typ. ? high power gain and low noise figure; pg = 17.5 db typ., nf = 1.15 db typ. at f = 1.8 ghz outline cmpak-4 1. emitter 2. collecto r 3. emitter 4. base 1 4 3 2 cmpak-4 1. emitter 2. collecto r 3. emitter 4. base 1 4 3 2 note: marking is ?wu??.
2SC5820 rev.1, nov. 2002, page 2 of 12 absolute maximum ratings (ta = 25 c) item symbol ratings unit collector to base voltage v cbo 12 v collector to emitter voltage v ceo 4.0 v emitter to base voltage v ebo 1.5 v collector current i c 35 ma collector power dissipation pc 100 mw junction temperature tj 150 c storage temperature tstg ? 55 to +150 c electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions collector cutoff current i cbo ? ? 1 a v cb = 12 v, i e = 0 collector cutoff current i ceo ? ? 1 a v ce = 4 v, r be = emitter cutoff current i ebo ? ? 10 a v eb = 1.5 v, i c = 0 dc current transfer ratio h fe 70 110 150 ? v ce = 2 v, i c = 20 ma collector output capacitance c ob ? 0.3 0.6 pf v cb = 2 v, i e = 0, f = 1 mhz gain bandwidth product f t 17 20 ? ghz v ce = 2 v, i c = 30 ma f = 2 ghz power gain pg 13 17.5 ? db v ce = 2 v, i c = 30 ma, f = 1.8 ghz noise figure nf ? 1.15 1.7 db v ce = 2 v, i c = 5 ma, f = 1.8 ghz 3rd. order intercept point ip3 ? 10 ? dbm v ce = 2 v, i c = 5 ma, f = 1.8 ghz
2SC5820 rev.1, nov. 2002, page 3 of 12 0 50 100 150 200 10 0 collector power dissipation p c (mw) collector power dissipation curve 10 100 200 0 120 collector current i c (ma) dc current transfer ratio h fe dc current transfer ratio vs. collector current 25 50 v ce = 2 v 0 0.4 0.6 1 collector current i c (ma) typical transfer characteristics collector current i c (ma) typical output characteristics ambient temperature ta ( c) collector to emitter voltage v ce (v) base to emitter voltage v be (v) 0.2 0.8 v ce = 2 v 50 100 150 200 50 40 30 20 10 10 20 30 40 50 150 50 01 2 3 4 i b = 50 a 100 a 150 a 200 a 250 a 300 a 350 a 400 a 450 a 500 a
2SC5820 rev.1, nov. 2002, page 4 of 12 collector to base voltage v cb (v) collector output capacitance c ob (pf) collector output capacitance vs. collector to base voltage 0.2 0.4 0.6 0.8 1.0 1 2 5 10 20 50 100 0 10 20 30 collector current i c (ma) gain bandwidth product vs. collector current f= 2 ghz v ce = 2 v 012345 0 emitter to base voltage v eb (v) emitter input capacitance c ib (pf) emitter input capacitance vs. emitter to base voltage 0.4 0.8 1.2 1.6 2.0 -1 1 0 0 collector to base voltage v cb (v) reverse transfer capacitance c re (pf) reverse transfer capacitance vs. collector to base voltage 0.2 0.4 0.6 0.8 1.0 012345 0 i e = 0 f = 1 mhz i c = 0 f = 1 mhz i e = 0 f = 1 mhz gain bandwidth product f t (ghz)
2SC5820 rev.1, nov. 2002, page 5 of 12 10 12 20 0 120 collector current i c (ma) s 21 parameter |s 21 | 2 (db) s 21 parameter vs. collector current 25 50 16 8 4 v ce = 2 v f = 2 ghz -40 -20 20 output power p out (dbm) 3rd. order intercept point (ip3) input power p in (dbm) -60 0 -80 -40 -20 0 20 collector current i c (ma) noise figure nf (db) noise figure vs. collector current collector current i c (ma) power gain pg (db) power gain vs. collector current 100 3rd. harmonic f = 1.8 ghz v ce = 2 v ic = 5 ma fundamental -60 1 10 100 1 2 3 4 5 0 25 20 50 f = 1.8 ghz v ce = 2 v v ce = 3 v v ce = 1 v 12 510205010 0 0 4 8 12 16 20 f = 1.8 ghz v ce = 3 v v ce = 2 v v ce = 1 v
2SC5820 rev.1, nov. 2002, page 6 of 12 10 5 4 3 2 1.5 1 .8 -2 -3 -4 -5 -10 .6 .4 .2 0 -.2 -.4 -.6 -.8 -1 -1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 0 30 60 90 120 150 180 -150 -90 -60 -30 -120 30 60 90 120 150 180 -150 -90 -60 -30 -120 10 5 4 3 2 1.5 1 .8 -2 -3 -4 -5 -10 .6 .4 .2 0 -.2 -.4 -.6 -.8 -1 -1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 scale: 8 / div. scale: 0.06 / div. 0 s 11 parameter vs. frequency s 21 parameter vs. frequency s 12 parameter vs. frequency s 22 parameter vs. frequency condition: v ce = 2 v, z o = 50 ? 100 to 3000 mhz (100 mhz step) ( i c = 30 ma) condition: v ce = 2 v, z o = 50 ? 100 to 3000 mhz (100 mhz step) ( i c = 30 ma) condition: v ce = 2 v, z o = 50 ? 100 to 3000 mhz (100 mhz step) ( i c = 30 ma) condition: v ce = 2 v, z o = 50 ? 100 to 3000 mhz (100 mhz step) ( i c = 30 ma)
2SC5820 rev.1, nov. 2002, page 7 of 12 s parameter (v ce = 2 v, i c = 5 ma, z o = 50 ? ) s11 s21 s12 s22 f (mhz) mag ang mag ang mag ang mag ang 100 0.844 -24.6 15.26 159.9 0.0124 78.9 0.976 -16.4 200 0.835 -23.1 15.07 162.9 0.0153 84.0 0.973 -11.7 300 0.838 -34.2 14.59 154.8 0.0236 80.2 0.953 -17.5 400 0.809 -45.7 13.94 147.1 0.0311 72.5 0.919 -23.6 500 0.781 -56.2 13.16 139.9 0.0387 67.5 0.879 -29.0 600 0.745 -66.8 12.39 133.1 0.0441 61.6 0.828 -33.9 700 0.710 -76.0 11.71 127.7 0.0506 56.2 0.779 -38.6 800 0.688 -85.5 10.89 121.8 0.0537 52.0 0.728 -41.9 900 0.659 -93.5 10.16 117.0 0.0579 47.7 0.682 -45.4 1000 0.639 -101.0 9.47 112.8 0.0610 46.8 0.641 -47.4 1100 0.633 -107.3 8.77 108.6 0.0643 41.1 0.601 -49.8 1200 0.596 -115.4 8.40 105.2 0.0640 40.4 0.560 -51.8 1300 0.578 -121.8 7.92 101.5 0.0665 37.6 0.528 -54.0 1400 0.570 -128.0 7.47 98.3 0.0675 37.4 0.499 -55.4 1500 0.556 -133.1 7.04 95.6 0.0685 32.9 0.473 -57.1 1600 0.548 -138.8 6.68 92.5 0.0691 32.9 0.449 -58.0 1700 0.541 -143.6 6.37 90.1 0.0693 32.5 0.422 -59.0 1800 0.532 -149.0 6.08 87.5 0.0699 30.2 0.400 -60.6 1900 0.529 -153.1 5.77 85.0 0.0716 30.6 0.384 -60.7 2000 0.523 -157.1 5.53 83.2 0.0735 28.8 0.370 -62.1 2100 0.520 -162.0 5.29 80.4 0.0719 30.4 0.349 -62.5 2200 0.521 -164.7 5.03 79.1 0.0733 28.1 0.345 -63.6 2300 0.521 -168.8 4.86 76.4 0.0752 26.6 0.326 -64.0 2400 0.521 -172.0 4.67 74.4 0.0748 26.8 0.312 -64.8 2500 0.520 -175.7 4.53 72.3 0.0752 26.8 0.297 -65.6 2600 0.522 -178.4 4.33 70.6 0.0765 26.2 0.292 -66.7 2700 0.525 178.2 4.21 68.6 0.0771 27.6 0.280 -67.8 2800 0.526 175.6 4.05 67.2 0.0775 27.4 0.275 -68.9 2900 0.529 172.4 3.91 64.8 0.0785 25.5 0.260 -69.5 3000 0.532 169.7 3.82 62.7 0.0772 24.6 0.249 -70.5
2SC5820 rev.1, nov. 2002, page 8 of 12 (v ce = 2 v, i c = 10 ma, z o = 50 ? ) s11 s21 s12 s22 f (mhz) mag ang mag ang mag ang mag ang 100 0.717 -17.3 25.92 167.8 0.0073 84.9 0.967 -8.4 200 0.712 -34.2 24.87 156.2 0.0137 81.4 0.941 -17.1 300 0.699 -50.1 23.25 145.5 0.0205 73.7 0.896 -25.1 400 0.667 -65.5 21.32 136.0 0.0266 66.0 0.833 -32.8 500 0.635 -78.9 19.27 127.6 0.0319 62.0 0.766 -39.1 600 0.600 -91.5 17.37 120.5 0.0349 56.4 0.694 -44.3 700 0.572 -102.0 15.73 115.1 0.0403 52.7 0.632 -48.6 800 0.553 -112.1 14.26 109.6 0.0402 51.2 0.574 -51.7 900 0.533 -120.1 12.97 105.3 0.0445 46.0 0.525 -54.8 1000 0.522 -127.4 11.90 101.6 0.0472 47.2 0.484 -56.2 1100 0.515 -133.7 10.90 98.1 0.0476 43.4 0.446 -58.4 1200 0.499 -140.9 10.16 95.3 0.0477 44.4 0.410 -59.4 1300 0.492 -146.8 9.46 92.2 0.0505 43.3 0.381 -61.0 1400 0.490 -152.1 8.84 89.6 0.0509 43.8 0.357 -61.9 1500 0.484 -156.6 8.27 87.4 0.0520 39.7 0.335 -62.9 1600 0.484 -161.3 7.79 84.8 0.0533 41.0 0.316 -63.4 1700 0.482 -165.3 7.38 82.8 0.0540 41.4 0.295 -64.0 1800 0.481 -169.8 6.99 80.7 0.0548 40.0 0.277 -65.0 1900 0.481 -173.1 6.63 78.7 0.0578 41.6 0.265 -65.1 2000 0.481 -176.4 6.33 76.9 0.0601 39.9 0.252 -66.1 2100 0.483 179.9 6.02 74.8 0.0603 42.3 0.238 -66.1 2200 0.484 177.3 5.75 73.4 0.0610 39.9 0.232 -66.9 2300 0.488 174.4 5.52 71.4 0.0641 39.3 0.219 -67.2 2400 0.489 171.8 5.29 69.6 0.0646 39.5 0.209 -67.7 2500 0.491 169.0 5.10 67.8 0.0664 40.2 0.197 -68.0 2600 0.495 166.5 4.89 66.2 0.0678 39.7 0.194 -69.7 2700 0.501 164.3 4.73 64.6 0.0693 40.4 0.185 -71.0 2800 0.503 161.9 4.55 63.2 0.0705 40.2 0.181 -71.9 2900 0.508 159.6 4.39 61.4 0.0715 39.5 0.170 -72.9 3000 0.510 157.3 4.27 59.6 0.0717 37.3 0.162 -74.0
2SC5820 rev.1, nov. 2002, page 9 of 12 (v ce = 2 v, i c = 20 ma, z o = 50 ? ) s11 s21 s12 s22 f (mhz) mag ang mag ang mag ang mag ang 100 0.556 -26.3 38.68 163.4 0.0065 88.2 0.937 -11.6 200 0.550 -50.8 35.60 148.3 0.0117 78.3 0.882 -23.2 300 0.537 -72.0 31.52 135.5 0.0174 71.3 0.805 -32.9 400 0.519 -90.7 27.37 125.0 0.0215 63.3 0.716 -41.4 500 0.501 -105.4 23.66 116.7 0.0252 62.0 0.633 -47.6 600 0.485 -118.3 20.55 110.2 0.0276 57.0 0.556 -52.3 700 0.475 -128.1 18.10 105.3 0.0310 54.2 0.495 -55.9 800 0.470 -137.3 16.09 100.7 0.0312 54.1 0.441 -58.4 900 0.462 -144.3 14.43 97.1 0.0352 51.7 0.397 -60.8 1000 0.460 -150.4 13.12 94.1 0.0369 53.1 0.362 -61.7 1100 0.460 -155.8 11.95 91.2 0.0389 50.4 0.330 -63.6 1200 0.458 -161.4 11.00 88.9 0.0397 52.5 0.302 -63.5 1300 0.457 -166.3 10.20 86.4 0.0425 51.5 0.280 -64.7 1400 0.460 -170.1 9.48 84.2 0.0441 53.3 0.260 -65.2 1500 0.457 -173.9 8.85 82.2 0.0452 49.4 0.242 -66.3 1600 0.462 -177.4 8.31 80.0 0.0469 50.7 0.227 -65.9 1700 0.462 179.3 7.84 78.4 0.0478 52.0 0.210 -66.4 1800 0.466 175.9 7.41 76.6 0.0496 49.7 0.198 -66.8 1900 0.467 173.3 7.02 74.8 0.0532 51.5 0.187 -67.2 2000 0.469 170.6 6.70 73.2 0.0548 50.1 0.178 -67.2 2100 0.474 167.8 6.36 71.4 0.0572 52.8 0.167 -67.3 2200 0.476 165.5 6.09 70.0 0.0574 50.9 0.161 -68.3 2300 0.480 163.3 5.82 68.3 0.0610 48.6 0.152 -68.2 2400 0.483 161.2 5.58 66.7 0.0616 49.0 0.143 -69.2 2500 0.486 159.0 5.37 65.0 0.0638 49.8 0.135 -69.8 2600 0.490 156.9 5.15 63.4 0.0661 48.6 0.131 -70.8 2700 0.497 155.3 4.97 62.1 0.0699 48.9 0.123 -72.9 2800 0.499 153.1 4.78 60.8 0.0715 49.3 0.122 -74.1 2900 0.505 151.4 4.61 59.2 0.0714 48.0 0.114 -75.4 3000 0.506 149.6 4.48 57.6 0.0713 46.7 0.106 -77.2
2SC5820 rev.1, nov. 2002, page 10 of 12 (v ce = 2 v, i c = 30 ma, z o = 50 ? ) s11 s21 s12 s22 f (mhz) mag ang mag ang mag ang mag ang 100 0.441 -34.8 45.76 160.6 0.0061 84.2 0.913 -13.6 200 0.449 -65.1 40.75 143.5 0.0110 78.8 0.838 -26.7 300 0.455 -88.7 34.81 129.9 0.0153 69.4 0.741 -37.1 400 0.455 -107.9 29.32 119.4 0.0185 63.3 0.641 -45.5 500 0.451 -122.1 24.83 111.5 0.0223 61.5 0.558 -51.2 600 0.450 -133.9 21.25 105.6 0.0238 58.6 0.485 -55.6 700 0.449 -142.5 18.53 101.1 0.0280 55.9 0.428 -58.5 800 0.451 -150.6 16.36 97.0 0.0284 57.8 0.378 -60.4 900 0.449 -156.4 14.62 93.7 0.0321 55.5 0.340 -62.8 1000 0.449 -161.7 13.25 91.1 0.0347 57.7 0.308 -63.1 1100 0.453 -166.3 12.05 88.4 0.0360 55.5 0.279 -64.9 1200 0.455 -171.0 11.05 86.3 0.0364 58.0 0.256 -64.1 1300 0.457 -175.0 10.23 84.0 0.0399 56.7 0.236 -65.2 1400 0.460 -178.3 9.50 82.0 0.0413 58.5 0.220 -65.5 1500 0.460 178.5 8.86 80.2 0.0438 54.8 0.204 -66.2 1600 0.466 175.5 8.32 78.1 0.0437 55.1 0.190 -65.9 1700 0.466 172.7 7.84 76.5 0.0465 56.5 0.176 -65.8 1800 0.471 169.8 7.41 74.8 0.0481 55.4 0.165 -66.4 1900 0.472 167.4 7.02 73.2 0.0517 56.0 0.157 -66.9 2000 0.476 165.0 6.69 71.6 0.0540 54.4 0.149 -66.8 2100 0.480 162.7 6.35 69.9 0.0560 56.9 0.139 -67.3 2200 0.483 160.5 6.08 68.5 0.0573 55.2 0.134 -67.8 2300 0.487 158.7 5.81 66.9 0.0604 52.3 0.126 -67.7 2400 0.489 156.8 5.56 65.4 0.0617 53.6 0.117 -68.2 2500 0.493 154.9 5.35 63.8 0.0633 53.4 0.110 -68.8 2600 0.497 153.0 5.14 62.2 0.0659 51.6 0.107 -70.8 2700 0.504 151.6 4.96 60.9 0.0690 52.2 0.101 -72.8 2800 0.507 149.5 4.77 59.6 0.0711 52.9 0.099 -73.4 2900 0.511 148.0 4.59 58.1 0.0714 50.9 0.091 -76.1 3000 0.515 146.3 4.47 56.5 0.0717 49.4 0.085 -78.0
2SC5820 rev.1, nov. 2002, page 11 of 12 package dimensions 2.0 0.2 0.3 2.1 0.3 0.65 0.6 1.25 0.2 0.16 0 ? 0.1 0.9 0.1 + 0.1 ? 0.05 0.4 + 0.1 ? 0.05 0.3 + 0.1 ? 0.05 + 0.1 ? 0.06 0.65 0.65 1.3 0.2 0.3 + 0.1 ? 0.05 0.425 0.425 0.2 hitachi code jedec jeita mass (reference value) cmpak-4(t) ? conforms 0.006 g 1.25 0.1 as of july, 2002 unit: mm
2SC5820 rev.1, nov. 2002, page 12 of 12 disclaimer 1. hitachi neither warrants nor grants licenses of any rights of hitachi?s or any third party?s patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party?s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi?s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi?s sales office for any questions regarding this document or hitachi semiconductor products. sales offices hitachi, ltd. semiconductor & integrated circuits nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2002. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00 singapore 049318 tel : <65>-6538-6533/6538-8577 fax : <65>-6538-6933/6538-3877 url : http://semiconductor.hitachi.com.sg url http://www.hitachisemiconductor.com/ hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road hung-kuo building taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://semiconductor.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel : <852>-2735-9218 fax : <852>-2730-0281 url : http://semiconductor.hitachi.com.hk hitachi europe gmbh electronic components group dornacher str 3 d-85622 feldkirchen postfach 201, d-85619 feldkirchen germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi europe ltd. electronic components group whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 778322 hitachi semiconductor (america) inc. 179 east tasman drive san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 7.0

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